TOSHIBA N-CHANNEL IGBT MODULE

MG2/00J2YS50

Status: In stock

CA$199.99

Description

Description

MG200J2YS50 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a plete half bridge in one package.

MG200J2YS50 Key Features

  • The electrodes are isolated from case
  • High input impedance
  • Includes a plete half bridge in one package
  • Enhancement-mode
  • High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A)
  • Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A
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