| Parameter |
Value |
| Manufacturer |
Toshiba |
| Part Number |
MG200H1AL2 |
| Device Type |
Silicon NPN triple-diffused Darlington transistor w/ freewheel diode |
| Collector-Base Voltage (VCBO) |
600 V |
| Collector-Emitter Sustaining (VCES(sus)) |
600 V |
| Collector-Emitter Sustaining (VCEO(sus)) |
550 V |
| Emitter-Base Voltage (VEBO) |
6 V |
| Collector Current (DC / 1 ms) |
200 A / 400 A |
| Forward Diode Current (DC / 1 ms) |
200 A / 400 A |
| Base Current (IB) |
25 A |
| hFE (min.) |
80 @ VCE=5 V, IC=200 A |
| VCE(sat) (max) |
2.0 V @ IC=200 A |
| VBE(sat) (max) |
2.7 V @ IC=200 A, IB=6 A |
| Switching (max) |
ton 2.0 µs; tstg 12 µs; tf 4.0 µs |
| Diode (per leg) |
VF 1.5 V typ @ 200 A; trr 2.0 µs |
| Thermal Resistance |
RthJC(transistor) 0.156 °C/W; RthJC(diode) 0.65 °C/W |
| Collector Power Dissipation |
800 W @ TC=25 °C |
| Isolation (terminals→base) |
2.5 kVRMS / 1 min |
| Operating / Storage |
Tj ≤ 150 °C / Tstg −40…+125 °C |
| Package / Mass |
Toshiba 2-68D1A; ≈ 210 g |
| Screw Torque |
30 kg·cm (terminals) / 30 kg·cm (mounting) |
| Configuration |
Single transistor module |
